Galliumnitride相关论文
Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transisto
AlGaN/GaN high electron mobility transistors(HEMTs)were irradiated with heavy ions at various fluences.After irradiation......
Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer D
In this work,the GaN thin films were directly deposited on multilayer graphene (MLG) by plasma-enhanced atomic layer dep......
Graphene on gallium nitride (GaN) will be quite useful when the graphene are used as transparent electrodes to improve t......
Capture cells on substrate is essential for tumor diagnosis and therapy, it provides another method targeted to kill can......
Ⅲ-Nitride semiconductor is a fantastic family system,composed of binary (AlN,GaN,InN),Ternary (InAlN,AlGaN and InGaN) a......
高功率氮化镓基蓝光激光器在激光显示、激光照明和材料加工等领域具有很大的应用前景。通过优化蓝光激光器p-AlGaN限制层的生长温......
A1GaN/GaN high-electron-mobility transistors with Au-free ohmic contacts are fabricated by selective laser annealing and......
First-principles calculations of the formation and structures of point defects on GaN (0001) surface
We studied the structures and energies associated with 8 types of point defects on the [0001] surface of hexagonal g......
Differential negative resistance effect of output characteristics in deep sub-micrometer wurtzite Al
We obtained the output characteristics in wurtzite Al0.15Ga0.85N/GaN MODFETs with the full band Monte Carlo method. The ......
